| PART |
Description |
Maker |
| K7A803600M K7A801800M |
256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM Data Sheet
256Kx36 & 512Kx18 Synchronous SRAM
|
Samsung Electronic
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K7A403200B K7A403200B-QC K7A403201B K7A403201B-QC |
256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM
128Kx36/x32 & 256Kx18 Synchronous SRAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K7B801825B |
256Kx36 & 512Kx18-Bit Synchronous Burst SRAM
|
Samsung Electronic
|
| K7N803601B K7N803649B-QC25 DS_K7N803601B K7M801825 |
512Kx36 & 1Mx18 Pipelined NtRAM
256Kx36 & 512Kx18-Bit Flow Through NtRAM
256Kx36 & 512Kx18-Bit Pipelined NtRAMTM
THERMISTOR, NTC; Series:B572; Thermistor type:NTC; Resistance:5R; Tolerance, resistance:20%; Beta value:2800; Temperature, lower limit, beta value:25(degree C); Temperature, upper limit, beta value:100(degree C); Case RoHS Compliant: Yes
256Kx36 & 512Kx18-Bit Pipelined NtRAM 256Kx36
|
http://
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| K7D801871B K7D801871B-HC37 K7D801871B-HC35 K7D8018 |
256Kx36 & 512Kx18 SRAM
1Mx36 & 2Mx18 DDRII CIO b2 SRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| KM736V887 |
256Kx36 & 512Kx18 Synchronous SRAM
|
Samsung semiconductor
|
| GVT71256ZC36 |
(GVT7xxxx) 256Kx36/512Kx18 Pipelined SRAM With Nobltm Architecture
|
Cypress Semiconductor
|
| K7P801866M |
256Kx36 & 512Kx18 Synchronous Pipelined SRAM Data Sheet
|
Samsung Electronic
|
| TC55WD1618FF-133 TC55WD1618FF-167 TC55WD1618FF-150 |
1,048,576-WORD BY 18-BIT SYNCHRONOUS NO-TURNAROUND STATIC RAM
|
TOSHIBA
|
| TC55VL836FFI-83 |
262,144-WORD BY 36-BIT SYNCHRONOUS NO-TURNAROUND STATIC RAM
|
TOSHIBA
|
| TC55VL818FF-83 |
524,288-WORD BY 18-BIT SYNCHRONOUS NO-TURNAROUND STATIC RAM
|
TOSHIBA
|
